A team led by Andrew Lovett of the Department of Engineering at the University of Cambridge in the United Kingdom has developed a new type of cerium oxide with a higher dielectric constant. It is expected to be used in the next generation of more microelectronic devices, photovoltaic manufacturing equipment and more efficient photovoltaics. Battery and so on. At present, yttria has become a key material in the electronics industry. Metal oxides such as antimony oxide are used in a wide range of applications. Normally, they are manufactured by spraying on a pedestal. However, when scientists try to create high-quality electronic materials by sputtering, they have encountered a problem that it is difficult to precisely control the energy conditions and material properties of the deposition process. To this end, the floitt team used a novel deposition technique developed by British Plasma Exploration Co., Ltd.—using high target sputtering (HiTUS) to promote plasma sputtering. Antimony oxide is an electrical insulator that can be used to make optical coatings, capacitors, and transistors. Because the dielectric constant of ytterbium oxide (the ratio between the electric displacement and the electric field density that generates the electric displacement) is relatively high, the higher the dielectric constant of the material, the stronger its ability to store the charge, that is, the greater the capacitance, some The company is currently replacing silicon dioxide in transistors with yttrium oxide. Cerium oxide can occur in different amorphous and polycrystalline structures. However, the amorphous structure lacks the grain boundaries existing in the polycrystalline structure (in a polycrystalline material, the two crystals meet the grain boundary), and thus is better than the polycrystalline structure. The grain boundary is like a conductive path, which not only reduces the resistivity, but also leads to uneven conductivity of the device over a large area. This can cause the performance of the device to become non-uniform. However, to date, the dielectric constant of non-crystalline hafnium oxide has been relatively low, only about 20, while the new type of hafnium oxide developed by the Lovett team has a dielectric constant higher than 30. Flovit said that the properties of amorphous dielectrics (including yttrium oxide) are more uniform than other forms, and that the absence of grain boundaries also results in higher resistivity and lower photon scattering. Researchers at the room temperature, using a rapid deposition process to create new materials, which makes it particularly suitable for the manufacture of organic electronic devices, high-capacity semiconductors. The absence of grain boundaries also makes this material an ideal material for the manufacture of optical coatings and high-efficiency photovoltaic devices.
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Successful development of new-type yttrium oxide solar cells is expected to break the record